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Ultrananotech Private Limited

Ultrananotech Private Limited
Hoodi, Bangalore, Karnataka

gstGST : 29AABCU9740P1ZH Verified Add Review
Call 08048785785

Our Products

  1. Metal & Metal Products 39 Products available
  2. Nano Powder 24 Products available
  3. Electric Circuit Components & Parts 21 Products available
  4. Silicon Wafers 16 Products available
  5. Earthing Electrodes 8 Products available
  6. Microcontroller 8 Products available
  7. Industrial Chemicals 6 Products available
  8. Healing Crystals 5 Products available
  9. Plastic Film 4 Products available
  10. Chocolate Snack 4 Products available
  11. Others Products 89 Products available

Microcontroller

Our offered Product range includes GFET-S10 for Sensing applications, GFET-S11 for Sensing applications, GFET-S12 for Sensing applications, GFET-S20 for Sensing Applications and GFET-S20P for Sensing applications.

GFET-S10 for Sensing applications

GFET-S10 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature High Quality, Long Life
  • Country of Origin India

TYPICAL SPECIFICATIONS

 

  • GFET-S10 (Die size 10 mm x 10 mm)
  • Processed in Clean Room Class 1000
  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 36
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
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GFET-S11 for Sensing Applications

GFET-S11 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Utrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURES

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 31
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Dirac point: <50 V
  • Minimum working devices: >75 %
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GFET-S12 for Sensing Applications

GFET-S12 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURES

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 27
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Dirac point: <50 V
  • Minimum working devices: >75 %
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GFET-S20 for Sensing Applications

GFET-S20 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURE

  • GFET-S20 (Die size 10 mm x 10 mm)
  • Processed in Clean Room Class 1000
  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 12
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω.cm
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GFET-S20P for Sensing Applications

GFET-S20P For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURES

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 525 μm
  • Number of GFETs per chip: 12
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Encapsulation: ≈200 nm glutarimide-based
  • Dirac point (liquid gating): <1V
  • Minimum working devices: >75 %
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GFET-S22 for Sensing Applications

GFET-S22 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURE

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 12 in parallel
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Encapsulation: 50 nm Al2O3
  • Dirac point (liquid gating): <1V
  • Minimum working devices: >75 %
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GFET-S22P for Sensing Applications

GFET-S22P For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality
  • Country of Origin India
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MGFET-4D for Sensing Applications

MGFET-4D For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India
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