Listing ID #1709105
Company Information
Ask for more detail from the seller
Contact SupplierDetermination of energy band gap in semiconductor diode
experimental training board has been designed specifically for determination of energy band gap in semiconductor (p-n junction diode) using temperature dependent of reverse saturation current.
Objective:
01. To draw the characteristics of a p-n junction diode for reverse saturation current and temperature.
02. To determine the energy band gap in a p-n junction diode.
Features:
the board consists of the following built-in parts :
01. 2v d.c. At 10ma, regulated power supply.
02. Digital micro ammeter, 3½ digits having range 200ua d.c.
03. Semiconductor diode.
04. Thermometer 0-110 °c.
05. Oven, electrically heated to heat the semiconductor diode.
06. Mains onoff switch and fuse.
* the unit is operative on 230v ±10% at 50hz a.c. Mains.
* adequate no. Of patch cords stackable from rear both ends 4mm spring loaded plug length ½ metre.
* good quality, reliable terminalsockets are provided at appropriate places on panel for connections observation of waveforms.
* strongly supported by detailed operating instructions.