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Energy Band Gap in Semiconductor Diode

Listing ID #1709105

  • Brand NameUNICON
  • Supply Type Exporter, Supplier
  • Preferred Buyer Location All over the world

Determination of energy band gap in semiconductor diode experimental training board has been designed specifically for determination of energy band gap in semiconductor (p-n junction diode) using....
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Company Information

  • Member Since 18 Years
  • Nature of Business Manufacturer
  • Year of Establishment 1954

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Determination of energy band gap in semiconductor diode
experimental training board has been designed specifically for determination of energy band gap in semiconductor (p-n junction diode) using temperature dependent of reverse saturation current.
Objective:
01. To draw the characteristics of a p-n junction diode for reverse saturation current and temperature.
02. To determine the energy band gap in a p-n junction diode.
Features:
the board consists of the following built-in parts :
01. 2v d.c. At 10ma, regulated power supply.
02. Digital micro ammeter, 3½ digits having range 200ua d.c.
03. Semiconductor diode.
04. Thermometer 0-110 °c.
05. Oven, electrically heated to heat the semiconductor diode.
06. Mains onoff switch and fuse.
* the unit is operative on 230v ±10% at 50hz a.c. Mains.
* adequate no. Of patch cords stackable from rear both ends 4mm spring loaded plug length ½ metre.
* good quality, reliable terminalsockets are provided at appropriate places on panel for connections observation of waveforms.
* strongly supported by detailed operating instructions.


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Energy Band Gap in Semiconductor Diode at Best Price in Ambala - ID: 1709105
Products / Services
  • Products / Services
  • Companies
  • Buy Leads
Post Buy Requirement

Energy Band Gap in Semiconductor Diode

Listing ID #1709105

  • Brand NameUNICON
  • Supply Type Exporter, Supplier
  • Preferred Buyer Location All over the world

Determination of energy band gap in semiconductor diode experimental training board has been designed specifically for determination of energy band gap in semiconductor (p-n junction diode) using....
View More Details
Send Enquiry

Company Information

  • Member Since 18 Years
  • Nature of Business Manufacturer
  • Year of Establishment 1954

Ask for more detail from the seller

Contact Supplier

Product Details no_img_icon

Determination of energy band gap in semiconductor diode
experimental training board has been designed specifically for determination of energy band gap in semiconductor (p-n junction diode) using temperature dependent of reverse saturation current.
Objective:
01. To draw the characteristics of a p-n junction diode for reverse saturation current and temperature.
02. To determine the energy band gap in a p-n junction diode.
Features:
the board consists of the following built-in parts :
01. 2v d.c. At 10ma, regulated power supply.
02. Digital micro ammeter, 3½ digits having range 200ua d.c.
03. Semiconductor diode.
04. Thermometer 0-110 °c.
05. Oven, electrically heated to heat the semiconductor diode.
06. Mains onoff switch and fuse.
* the unit is operative on 230v ±10% at 50hz a.c. Mains.
* adequate no. Of patch cords stackable from rear both ends 4mm spring loaded plug length ½ metre.
* good quality, reliable terminalsockets are provided at appropriate places on panel for connections observation of waveforms.
* strongly supported by detailed operating instructions.


Tell us your Buy Requirement to Get Instant Response
Tell us what you need?

By clicking Get Quotes Now, I accept the T&C and Privacy Policy.

Looking for Energy Band Gap in Semiconductor Diode?

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Allow microphone access to search with voice