Built in regulated power supply+15v and -15v/300 mA.
UseTo demonstrate the operation of a typical insulated gate FET. To examine the relationship between the gate-to source voltage (VGS) the gate drain current (ID) and the drain-to source voltage (VDS) in an N-channel depletion mode IGFET.
Housing Enclosed in an elegant plastic injection molded cabinet for better viewing & portability.
Housing Enclosed in an elegant plastic injection molded cabinet for better viewing & portability.
UseTo demonstrate the operation of a typical insulated gate FET. To examine the relationship between the gate-to source voltage (VGS) the gate drain current (ID) and the drain-to source voltage (VDS) in an N-channel depletion mode IGFET.
Dimension27cmX 17cm X 10cm
Built in regulated power supply+15v and -15v/300 mA.