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Contact SupplierBoron doped diamond (BDD) is an excellent electrode material with a large potential window in aqueous solution and low background current. The wider potential window and lower background currents make the BDD material very attractive for electrochemical analysis experiments. Reactions occurring in potential ranges from about -0.5 V to -1.2 V and about 1.8 V to 2.5 V can now be analyzed which could not be analyzed on traditional electrode surfaces such as Au and Pt. The lower background current allows for higher sensitivity and lower detection limits.
Apart from its large potential window and low background currents boron doped diamond exhibits high chemical and electrochemical stability. BDD is mechanical robust and biocompatible which makes the material a suitable electrode material for various applications such as:
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Fabrication
Boron-doped diamond films are grown by microwave plasma assisted chemical vapor deposition. Due to the large variety of potential applications the material has to be synthesized on many different substrate materials (i.e. metals and silicon) and substrate geometries and dimensions (i.e. flat plates, discs, pins, and wires). The differences in thermal expansion between substrate material and diamond film at typical process temperatures of 700°C requires a careful design of the diamond thin film layering to prevent intrinsic residual stress induced material failures.