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Ultrananotech GFET-S12 For Sensing Applications, Feature : Durable, High Quality, Long Life

Ultrananotech GFET-S12 For Sensing Applications, Feature : Durable, High Quality, Long Life

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MOQ100 Piece
Brand NameUltrananotech
ConditionNew
ApplicationIndustrial, Laboratory
FeatureDurable, High Quality, Long Life
Country of OriginIndia
Supply TypeManufacturer, Exporter, Supplier
Preferred Buyer Location All over the world

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Company Information

Ultrananotech Private Limited

Hoodi, Bangalore, Karnataka

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Member Since 4 Years
Nature of Business Supplier
GST No. 29AABCU9740P1ZH

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Product Details
Company Details

Brand NameUltrananotech
ConditionNew
ApplicationIndustrial, Laboratory
FeatureDurable, High Quality, Long Life
Country of OriginIndia

FEATURES

Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Number of GFETs per chip: 27
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Dielectric Constant of the SiO2 layer: 3.9
Resistivity of substrate: 1-10 Ω.cm
Metallization: Au contacts
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point: <50 V
Minimum working devices: >75 %

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Seller Contact Details

SellerUltrananotech Private Limited
Address Hoodi, Bangalore, Karnataka
Websitehttps://www.ultrananotech.co.in

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