Power Semiconductors are quite often used in inverter applications with DC-Link.
High switching frequencies generate harmonics and line distortion. It is important
that electronic circuits in equipments reduce these influences to meet EMI filtering
requirements according to EMIEMC VDE and other international standards.
This noise level can be reduced by up to 10dB when the input rectifier bridges are
configured with Fast Recovery Diodes (Trr = 100 nsec to 200 nsec) as they enable
faster turn off resulting in lower peak recovery currents compared to standard
recovery normal rectifier diodes.
This noise level can be further reduced by approximately another 5dB when using
rectifier bridges with Ultra Fast Recovery Diodes (Trr = 35 nsec) and still further
when configured with Silicon Carbide Schottky Rectifier Diodes (Trr < 10 nsec).

Power Semiconductors are quite often used in inverter applications with DC-Link.
High switching frequencies generate harmonics and line distortion. It is important
that electronic circuits in equipments reduce these influences to meet EMI filtering
requirements according to EMIEMC VDE and other international standards.
This noise level can be reduced by up to 10dB when the input rectifier bridges are
configured with Fast Recovery Diodes (Trr = 100 nsec to 200 nsec) as they enable
faster turn off resulting in lower peak recovery currents compared to standard
recovery normal rectifier diodes.
This noise level can be further reduced by approximately another 5dB when using
rectifier bridges with Ultra Fast Recovery Diodes (Trr = 35 nsec) and still further
when configured with Silicon Carbide Schottky Rectifier Diodes (Trr < 10 nsec).