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silicon wafer 2” 3” 4” 5” 6” 8”
size (inch)
diameter 50.8±0.3 76.2±0.3 100±0.5 127±0.5 154±0.5 200±0.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle ≤30 @0.3um
oxygen ≤18 new ppma
content
carbon ≤1 new ppma
content
resistivity 1-10ohm/cm
others ttv≤15um, bow≤65um, warp≤65um
surface single side polished/double side polished
.