A and B grade solar wafers for cell manufacturing industry can be purchased from SemSil Technologies, Bangalore India.

Our supplies include

- 125 mm mono and multi silicon wafers

- 156 mm pseudo square mono silicon wafers

- 156 mm square multi / poly silicon wafers

Semsil Technologies and its group companies are appointed as official distributors for most of the European and Taiwanese wafer producers and 100% quality satisfaction is assured for our clientele.

Our payment terms for Indian cell manufacturers are in Indian Rupee and 100% Letter of Credit terms are accepted. Inco terms are - CIF, any airport in India

 156 mm multi silicon wafers

Conductivity                                       Type                     P-type

Base Area            156 mm X 156 mm       

Diagonal               220.0mm±0.5mm;

Thickness             200μm±20μm

TTV(µm)               ≤50μm

Resistivity             0.5-3.0Ωcm

Dopant Species    Boron

Orientation            (100) ±1°

Carbon                 ≤2.5×1017 at/cm3

Oxygen                ≤1×1018 at/cm3

Dislocation density   ≤3000 / cm2

Life time               ≥2μs

Wafer Surface      As cut and cleaned. No grease stains and pin holes

Warping                ≤50μm

Corner Angle        90±0.5 degree

Edge Chips           Length≤1.0mm, Depth＜0.5mm    

Edge Cracks         Not Allowed

Saw marks Depth ≤20μm

Pin Holes              No visible pin holes with the naked eye

A and B grade solar wafers for cell manufacturing industry can be purchased from SemSil Technologies, Bangalore India.

Our supplies include

- 125 mm mono and multi silicon wafers

- 156 mm pseudo square mono silicon wafers

- 156 mm square multi / poly silicon wafers

Semsil Technologies and its group companies are appointed as official distributors for most of the European and Taiwanese wafer producers and 100% quality satisfaction is assured for our clientele.

Our payment terms for Indian cell manufacturers are in Indian Rupee and 100% Letter of Credit terms are accepted. Inco terms are - CIF, any airport in India

 156 mm multi silicon wafers

Conductivity                                       Type                     P-type

Base Area            156 mm X 156 mm       

Diagonal               220.0mm±0.5mm;

Thickness             200μm±20μm

TTV(µm)               ≤50μm

Resistivity             0.5-3.0Ωcm

Dopant Species    Boron

Orientation            (100) ±1°

Carbon                 ≤2.5×1017 at/cm3

Oxygen                ≤1×1018 at/cm3

Dislocation density   ≤3000 / cm2

Life time               ≥2μs

Wafer Surface      As cut and cleaned. No grease stains and pin holes

Warping                ≤50μm

Corner Angle        90±0.5 degree

Edge Chips           Length≤1.0mm, Depth＜0.5mm    

Edge Cracks         Not Allowed

Saw marks Depth ≤20μm

Pin Holes              No visible pin holes with the naked eye