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1 Products availableOur Complete range of products are Silicon Wafer CZ 3 Inch P Type, Silicon Wafer FZ 6 Inch P Type, Silicon Wafer FZ 12 Inch P Type, Silicon Wafer CZ 5 Inch P Type and Silicon Wafer FZ 10 Inch P Type.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer
size (inch) 2 3 4 5 6 8
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation / /
type n-type/p-type
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer
size (inch) 2 3 4 5 6 8
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation / /
type n-type/p-type
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation / /
type n-type/p-type
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation / /
type n-type/p-type
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
products specification
silicon wafer 2 3 4 5 6 8
size (inch)
diameter 50.80.3 76.20.3 1000.5 1270.5 1540.5 2000.5
(mm )
growth cz/fz as requirements
method
grade prime / test / dummy grade
thickness 180-1000 um (+/-25) as required
orientation 100 / 110 / 111
type n-type/p-type as requirements
dopant p-type: boron
n-type: phosphorous/antimony/arsenic
particle 30 @0.3um
oxygen 18 new ppma
content
carbon 1 new ppma
content
resistivity 1-10ohm/cm
others ttv15um, bow65um, warp65um
surface single side polished/double side polished
.
Nano Research Elements (Nano Research Elements)
3rd Floor, 1010/121, Sarita Vihar, Metro Station, New Delhi - 110076, Delhi, India
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