Rare Earth Material #6183988

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are (group III) elements of the periodic table while arsenic is a (group V) element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.

The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications.

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 C.[3]

Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 13.8 m. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide is similar to gallium arsenide and is a direct bandgap material.

Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride.

Lanthanum is a chemical element with symbol La and atomic number 57. It is a soft, ductile, silvery-white metal that tarnishes rapidly when exposed to air and is soft enough to be cut with a knife. It is the eponym of the lanthanide series, a group of 15 similar elements between lanthanum and lutetium in the periodic table, of which lanthanum is the first and the prototype. It is also sometimes considered the first element of the 6th-period transition metals, which would put it in group 3, although lutetium is sometimes placed in this position instead. Lanthanum is traditionally counted among the rare earth elements. The usual oxidation state is +3. Lanthanum has no biological role in humans but is essential to some bacteria. It is not particularly toxic to humans but does show some antimicrobial activity.

A phosphate is a chemical derivative of phosphoric acid. The phosphate ion (PO3

4) is an inorganic chemical, the conjugate base that can form many different salts. Inorganic chemistry, a phosphate, or organophosphate, is an ester of phosphoric acid. Of the various phosphoric acids and phosphates, organic phosphates are important in biochemistry and biogeochemistry (and, consequently, in ecology), and inorganic phosphates are mined to obtain phosphorus for use in agriculture and industry.[2] At elevated temperatures in the solid state, phosphates can condense to form pyrophosphates.

Sodium selenide is an inorganic compound of sodium and selenium with the chemical formula Na2Se.

This colorless solid is prepared by the reaction of selenium with a solution of sodium in liquid ammonia at -40 C.[2]

Alternatively, sodium selenide can be prepared by the reaction of gaseous hydrogen selenide with metallic sodium at 100 C.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V direct bandgap semiconductor with a zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide, and others.

Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se). It is an intrinsic semiconductor with a band gap of about 2.70 eV at 25 C (77 F). ZnSe rarely occurs in nature, and is found in the mineral that was named after Hans Stille called "stilleite."

Copper indium gallium (di)selenide (CIGS) is an I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn(1-x)Ga(x)Se2 where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).