AVYAA ELECTRONICS

Malad West, Mumbai, Maharashtra

Features
1. Square Rbsoa
2. Low Saturation Voltage
3. Over Current Limiting Function (3 Times Rated Current)
4. Igbt Is Three-Terminal Power Semiconductor Device
5. High Frequency Operation

The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. The IGBT is used in medium- to high-power applications like switched-mode power supplies, traction motor control and induction heating. Large IGBT modules typically consist of many devices in parallel and can have very high current-handling capabilities in the order of hundreds of amperes with blocking voltages of 6000 V. These IGBTs can control loads of hundreds of kilowatts.

Transistor Modules

The transistor is the fundamental building block of modern electronic devices.

Aninsulated-gate bipolar transistor(IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. It switches electric power in many modern appliances: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts, air-conditioners and even stereo systems with switching amplifiers.